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  Datasheet File OCR Text:
 SMD Type
Transistors
Surface Mount NPN Silicon Transistor KXT5551 (CXT5551)
SOT-89
4.50
+0.1 -0.1
Unit: mm 1.50
+0.1 -0.1
+0.1 1.80-0.1
Features
+0.1 2.50-0.1
+0.1 0.48-0.1 +0.1 0.53-0.1
Low voltage (max. 150 V).
+0.1 0.80-0.1
+0.1 0.44-0.1
2.60
+0.1 -0.1
+0.1 4.00-0.1
High current (max. 500mA).
+0.1 3.00-0.1
0.40
1. Base 2. Collector 3. Emiitter
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) power dissipation thermal resistance Junction-to-ambient Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PD R
JA
Rating 180 160 6 600 1.2 104 150 -65 to +150
Unit V V V mA W /W
Tj Tstg
Electrical Characteristics Ta = 25
Parameter Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Symbol VCBO VCEO VEBO ICBO IC=100 A Testconditons Min 180 160 6.0 50 50 80 80 30 0.15 0.20 1.00 1.00 6.0 100 300 V V V V pF MHz 250 Typ Max Unit V V V nA A
IC=1.0mA IE=10 A
VCB = 120 V, IE = 0 VCB = 120 V, TA=100 IC = 1.0 mA; VCE = 5.0 V
DC current gain
hFE
IC = 10mA; VCE = 5.0V IC = 50 mA; VCE = 5.0V
Collector to emitter saturation voltage
VCE(sat)
IC = 10 mA; IB = 1.0mA IC = 50 mA; IB = 5.0mA
Base to emitter saturation voltage Output capacitance Transition frequency
VBE(sat) Cob fT
IC = 10 mA; IB = 1.0mA IC = 50 mA; IB = 5.0mA VCB = 10 V, IE = 0,f=1.0MHz IC = 10 mA; VCE =10V; f = 100 MHz
+0.1 -0.1
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